• DocumentCode
    2041621
  • Title

    Al-Al2O3-Ni-Cu structures for microwave microstrip lines

  • Author

    Shimanovich, D.L. ; Hamolka, P.V.

  • Author_Institution
    Belarusian state Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2013
  • fDate
    8-14 Sept. 2013
  • Firstpage
    736
  • Lastpage
    737
  • Abstract
    Based on Ni chemical deposition and Cu electrochemical deposition up to 30 μm thick onto large-size Al bases with Al2O3 one-sided dielectric coating obtained by electrochemical anodic process, technological modes for Al-Al2O3-Ni-Cu structures formation were developed. Electrophysical parameters for Al-Al2O3-Ni-Cu structures were studied and their promising application for microstrip lines of microwave systems passive part was demonstrated.
  • Keywords
    aluminium compounds; copper compounds; electrochemical electrodes; elemental semiconductors; microstrip lines; microwave devices; nickel compounds; oxygen compounds; copper chemical deposition; electrochemical anodic process; electrophysical parameters; microwave microstrip lines; microwave systems; nickel chemical deposition; one-sided dielectric coating; structures formation; technological modes; Aluminum oxide; Dielectrics; Educational institutions; Electronic mail; Microstrip; Microwave technology; Nickel;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-395-1
  • Type

    conf

  • Filename
    6653038
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2041621