Title :
Detectors with low-barrier Mott diodes for millimeter-wave imaging arrays
Author :
Shashkin, V.I. ; Murel, A.V.
Author_Institution :
Inst. for Phys. of Microstructures, Nizhny Novgorod, Russia
Abstract :
The paper presents experimental results of a study of millimeter-wave detectors (94 GHz) based on low-barrier gallium arsenide diodes manufactured using the technology of the near surface isotype delta-doping. By varying parameters of the deltalayer it is possible to obtain a wide range of values of the effective barrier height, which is important for millimeter-wave imaging arrays that require zero-bias detectors. Optimum performance of the detectors are obtained with diodes having the barrier height of ~0.3 eV as shown theoretically and confirmed experimentally. A study of dependence basic parameters of detectors on temperature, input power and radiation polarization was performed.
Keywords :
gallium compounds; millimetre wave detectors; millimetre wave diodes; millimetre wave imaging; delta layer; frequency 94 GHz; low-barrier Mott diodes; low-barrier gallium arsenide diodes; millimeter-wave detectors; millimeter-wave imaging arrays; near surface isotype delta-doping; radiation polarization; zero-bias detectors; Detectors; Electronic mail; Imaging; Millimeter wave technology; Resistance; Schottky diodes; Temperature dependence;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1