Title :
Quantum transport modeling in anisotropic semiconductors using Wigner function formulation
Author :
Kim, Kyoung-Youm ; Lee, Byoungho
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
The Wigner transport equation is formulated in anisotropic semiconductor quantum wells. We suggest a formulation in which we can use the conventional Wigner transport equation solvers developed assuming isotropic materials for the actual numerical calculation. The three-dimensional Wigner function involving effective mass tensor can be reduced into one-dimensional form which involves only one diagonal effective mass tensor element and the original three-dimensional Wigner function is given as the convolution of the one-dimensionally reduced Wigner function with a newly defined function related to the off-diagonal effective mass tensor elements.
Keywords :
Clebsch-Gordan coefficients; Ge-Si alloys; effective mass; elemental semiconductors; quantum well devices; resonant tunnelling diodes; semiconductor device models; semiconductor materials; semiconductor quantum wells; silicon; Si-SiGe; Si/SiGe double-barrier RTD; Wigner function formulation; Wigner transport equation; anisotropic semiconductor quantum well; convolution; effective mass tensor; quantum transport modeling; Anisotropic magnetoresistance; Convolution; Couplings; Effective mass; Electrons; Equations; Optical scattering; Semiconductor materials; Tensile stress; Tunneling;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022925