Russian technological equipment set for high power microwave fet´s and circuits based on GaAs and GaN

Author

Alexeev, A.N. ; Krasovitsky, D.M. ; Petrov, S.I. ; Chaly, V.P. ; Filaretov, A.G.

Author_Institution

Svetlana-Rost JSC, SemiTEq JSC, St. Petersburg, Russia

fYear

2013

fDate

8-14 Sept. 2013

Firstpage

744

Lastpage

746

Abstract

Using of SemiTEq equipment for high power microwave FET´s and circuits based on GaAs and GaN is shown. Main technological operations are demonstrated: heterostructures growth by MBE, ohmic contacts and gate metallization by electron-beam deposition, annealing of ohmic contacts in RTA system, etching mesa isolation and passivation layers deposition by plasma chemical methods. The basic problems and their solutions are discussed.

Keywords

III-V semiconductors; electron beam annealing; electron beam deposition; elemental semiconductors; etching; microwave circuits; ohmic contacts; plasma CVD; power MOSFET; semiconductor device metallisation; GaAs; GaN; Russian technological equipment set; electron-beam deposition; gate metallization; heterostructures growth; high power microwave FET; high power microwave circuits; mesa isolation layer deposition etching; mesa passivation layer deposition etching; ohmic contact annealing; plasma chemical methods; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Microwave circuits; Microwave devices; Molecular beam epitaxial growth; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-966-335-395-1

Type

conf

Filename

6653042