Title :
Russian technological equipment set for high power microwave fet´s and circuits based on GaAs and GaN
Author :
Alexeev, A.N. ; Krasovitsky, D.M. ; Petrov, S.I. ; Chaly, V.P. ; Filaretov, A.G.
Author_Institution :
Svetlana-Rost JSC, SemiTEq JSC, St. Petersburg, Russia
Abstract :
Using of SemiTEq equipment for high power microwave FET´s and circuits based on GaAs and GaN is shown. Main technological operations are demonstrated: heterostructures growth by MBE, ohmic contacts and gate metallization by electron-beam deposition, annealing of ohmic contacts in RTA system, etching mesa isolation and passivation layers deposition by plasma chemical methods. The basic problems and their solutions are discussed.
Keywords :
III-V semiconductors; electron beam annealing; electron beam deposition; elemental semiconductors; etching; microwave circuits; ohmic contacts; plasma CVD; power MOSFET; semiconductor device metallisation; GaAs; GaN; Russian technological equipment set; electron-beam deposition; gate metallization; heterostructures growth; high power microwave FET; high power microwave circuits; mesa isolation layer deposition etching; mesa passivation layer deposition etching; ohmic contact annealing; plasma chemical methods; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Microwave circuits; Microwave devices; Molecular beam epitaxial growth; Silicon carbide;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
