DocumentCode :
2041794
Title :
Polycrystalline and amorphous sol-gel derived WO3 thin films and their gas sensing properties
Author :
Li, Y.X. ; Galatsis, K. ; Wlodarski, W. ; Cole, J. ; Russo, S. ; Gorman, J. ; Rockelmann, N. ; Cantalini, C.
Author_Institution :
Lab. of Functional Inorg. Mater., Acad. Sinica, Shanghai, China
fYear :
2000
fDate :
2000
Firstpage :
206
Lastpage :
209
Abstract :
Amorphous and polycrystalline tungsten trioxide (WO3) thin films were prepared using the sol-gel process. Tungsten ethoxide was used as precursor material. The WO3 thin films were spun onto the sapphire and silicon substrates at 2500 rpm for 30 s. The X-ray diffraction (XRD) results revealed that the films annealed at low temperature of 420°C for 1 hr. are amorphous while those annealed at as high as 500°C are polycrystalline. The scanning electronic microscope (SEM) images revealed that the film annealed at 360°C was amorphous and the surface was smooth. The film showed good responses to 100 ppm, 1000 ppm and 1% O2 at an operating temperature of 170°C. At high operating temperatures the films showed unsaturated and sluggish responses to oxygen gas. The amorphous WO3 thin films showed no response to ozone. The crystallized thin films showed very stable response to oxygen.
Keywords :
X-ray diffraction; annealing; crystal microstructure; gas sensors; noncrystalline structure; scanning electron microscopy; sol-gel processing; thin films; tungsten compounds; 170 degC; 360 degC; 420 degC; 500 degC; Al2O3; O2 response; O3 response; SEM; Si; Si substrates; WO3; X-ray diffraction; XRD; amorphous thin films; annealing temperature; ethoxide precursor; gas sensing properties; operating temperature; polycrystalline thin films; sapphire substrates; scanning electronic microscopy; sol-gel derived thin films; Amorphous materials; Annealing; Scanning electron microscopy; Semiconductor thin films; Silicon; Substrates; Temperature; Transistors; Tungsten; X-ray imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
Type :
conf
DOI :
10.1109/COMMAD.2000.1022928
Filename :
1022928
Link To Document :
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