DocumentCode
2041827
Title
Microwave properties of semiconductors
Author
Poplavko, Yu.M. ; Kazmirenko, V.A.
Author_Institution
Nat. Tech. Univ. of Ukraine "Kiev Polytech. Inst.", Kiev, Ukraine
fYear
2013
fDate
8-14 Sept. 2013
Firstpage
750
Lastpage
751
Abstract
The paper presents study of frequency dependencies of dielectric permittivity and loss in the most important semiconductor materials, such as silicon and gallium arsenide, at microwave range, as well as their temperature dependencies. It is shown that dielectric permittivity exhibit practically no dispersion at microwaves, while increases with rising temperature.
Keywords
III-V semiconductors; dielectric losses; dielectric materials; elemental semiconductors; gallium arsenide; microwave materials; permittivity; silicon; GaAs; Si; dielectric loss; dielectric permittivity; frequency dependence; gallium arsenide; microwave properties; semiconductor materials; silicon; temperature dependence; Dielectrics; Electronic mail; Gallium arsenide; Microwave circuits; Permittivity; Silicon; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-395-1
Type
conf
Filename
6653044
Link To Document