X-ray diffraction simulation of strained InGaAs/AlGaAs multiple quantum wells grown by molecular beam epitaxy

Author

Zhou, D. ; Usher, B.F.

Author_Institution

Dept. of Electron. Eng., La Trobe Univ., Bundoora, Vic., Australia

fYear

2000

fDate

2000

Firstpage

210

Lastpage

213

Abstract

We present a simplified X-ray diffraction simulation method for InGaAs/AlGaAs multiple quantum well (MQW) structures grown by molecular beam epitaxy. In this method, an additional relationship between the structural parameters is derived from the MQW growth information. As a result, the number of independent variables is reduced to just one. This represents a significant improvement in the time required to obtain an X-ray dynamical simulation solution for MQW structures.

Keywords

III-V semiconductors; X-ray diffraction; aluminium compounds; gallium arsenide; indium compounds; internal stresses; molecular beam epitaxial growth; semiconductor quantum wells; InGaAs-AlGaAs; MQW; MQW growth; X-ray diffraction simulation; X-ray dynamical simulation solution; molecular beam epitaxy; strained InGaAs/AlGaAs multiple quantum wells; structural parameters; Equations; Gallium arsenide; Indium gallium arsenide; Lattices; Molecular beam epitaxial growth; Optical modulation; Quantum well devices; Satellites; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022929

Filename

1022929