DocumentCode
2041901
Title
Growth of ultrathin chemically-deposited CdS films from an ammonia-thiourea reaction system
Author
Gluszak, Edward A. ; Hinckley, Steven
Author_Institution
Sch. of Eng. & Math., Edith Cowan Univ., Churchlands, WA, Australia
fYear
2000
fDate
2000
Firstpage
218
Lastpage
221
Abstract
Polycrystalline CdS films, with thicknesses typically 0.005 to 0.5 μm, have been chemically deposited from an ammonia-thiourea system. The influence of reaction parameters (i.e. concentration of reactants and pH) on film growth rate were determined and modelled. The results of a kinetic study are presented, resulting in the formulation of a growth rate formula. The deposited film properties are dependent on temperature, stirring, relative concentrations of the solution reactants, type of reactants, and solution pH. Thin film growth is thermally activated with an activation energy EA∼5×1023 eV/mol.
Keywords
II-VI semiconductors; cadmium compounds; liquid phase deposited coatings; liquid phase deposition; semiconductor growth; semiconductor thin films; 0.005 to 0.5 micron; CdS; NH3; activation energy; ammonia-thiourea reaction system; chemical solution deposition; film growth rate; film thickness; pH; polycrystalline CdS film; reactant concentration; reaction parameters; ultrathin chemically-deposited CdS films; Cadmium compounds; Chemical engineering; Chemical processes; Kinetic theory; Optical films; Substrates; Surface morphology; Temperature; Transistors; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN
0-7803-6698-0
Type
conf
DOI
10.1109/COMMAD.2000.1022931
Filename
1022931
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