Title :
Fem modeling of thin film resonator based on (0001) AlN
Author :
Bosov, S.I. ; Dvoesherstov, M.Y. ; Leontyev, N.V.
Author_Institution :
Affiliation of N.I. Lobachevsky State Univ. of Nizhniy Novgorod, Nizhny Novgorod, Russia
Abstract :
The paper describes a method of numerical modeling of thin-film single-frequency resonator on bulk acoustic waves (FBAR) using the finite element method (FEM), presents results and their comparison with the results obtained by using the Nowotny-Benes theory.
Keywords :
III-V semiconductors; acoustic resonators; aluminium compounds; bulk acoustic wave devices; finite element analysis; thin film devices; wide band gap semiconductors; AlN; FBAR; FEM modeling; Nowotny-Benes theory; finite element method; thin film resonator; thin-film single-frequency bulk acoustic wave resonator; Acoustic waves; Electronic mail; Film bulk acoustic resonators; Finite element analysis; III-V semiconductor materials; Numerical models; Three-dimensional displays;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
