Title :
High-linearity and variable gate-voltage swing dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors
Author :
Lour, W.S. ; Tsai, Min-Kang ; Chen, K.-C. ; Wu, Y.-W. ; Tan, S.W. ; Yang, Y.J.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan-Ocean Univ., Keelung, Taiwan
Abstract :
InGaP/InGaAs pseudomorphic high electron mobility transistors (PHEMTs) fabricated using single-gate and dual-gate methodologies have been characterized with special emphasis to precisely control the device linearity and the gate-voltage swing. The key features of the proposed PHEMT profile are characterized in a composite channel by using a GaAs delta sheet and an undoped InGaAs layer. The gate voltage dependence of transconductance for the first equivalent gate with several Vgs2 shows that the gate voltage swing available is in the range of 0 to 4.5 V.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; 0 to 4.5 V; GaAs delta sheet; In0.5Ga0.5P/In0.2Ga0.8As; InGaP-InGaAs; PHEMT profile; composite channel; device linearity; dual-gate PHEMT; gate voltage dependence; gate-voltage swing; pseudomorphic high electron mobility transistors; single-gate PHEMT; transconductance; undoped InGaAs layer; Electric variables control; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; Linearity; MODFETs; PHEMTs; Transconductance; Voltage;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022933
