DocumentCode :
2041998
Title :
Measurement of p-n junction-to-case thermal resistance in impatt diodes
Author :
Kudryk, Ya.Ya. ; Slipokurov, V.S. ; Koltsov, G.S.
Author_Institution :
Inst. of Semicond. Phys. named after V.E. Lashkaryov of NAS Ukraine, Kiev, Ukraine
fYear :
2013
fDate :
8-14 Sept. 2013
Firstpage :
762
Lastpage :
763
Abstract :
We present a method for measurement of p-n junction temperature as well as static and pulse thermal resistance in IMPATT diodes. The method is tested using 8 mm-wave IMPATT diodes with an integrated heat sink made at the State Enterprise Research Institute “Orion” (Kyiv).
Keywords :
IMPATT diodes; heat sinks; p-n junctions; temperature measurement; thermal resistance; IMPATT diode; State Enterprise Research Institute Orion; integrated heat sink; p-n junction temperature measurement; pulse thermal resistance; static thermal resistance; Electrical resistance measurement; Gold; P-n junctions; Semiconductor device measurement; Semiconductor diodes; Silicon; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
Type :
conf
Filename :
6653050
Link To Document :
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