Title :
InP/InGaAs heterojunction bipolar transistors with superlattice emitter structure
Author :
Wang, Wei-Chou ; Lin, Kuan-Po ; Yu, Kuo-Hui ; Lin, Kun-Wei ; Yen, Chih-Hung ; Chiou, Wen-Huei ; Wang, Chih-kai ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A heterojunction bipolar transistor with superlattice emitter structure based on InP/InGaAs material system has been demonstrated. Two devices with different period of superlattice and emitter thickness were proposed. By introducing the superlattice into the emitter, the confinement of holes is enhanced. Experimentally, for higher periods of superlattice, the current gain is enhanced and more stable temperature-dependent characteristics are observed. The common-emitter current gains up to 170 and 54 are obtained for the studied devices with emitter thickness of 800Å and 150Å, respectively.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor superlattices; InP-InGaAs; InP/InGaAs heterojunction bipolar transistor; current gain; hole confinement; superlattice emitter structure; temperature dependence; Bipolar transistors; Effective mass; Electrons; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Resonant tunneling devices; Substrates; Superlattices; Thermal conductivity;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022935
