DocumentCode :
2042129
Title :
Simulation of Sub-Femtosecond Response in Laser-Assisted Field Emission
Author :
Hagmann, M.J. ; Mousa, M.S.
Author_Institution :
New Path Res., Salt Lake City, UT
fYear :
2006
fDate :
38899
Firstpage :
203
Lastpage :
204
Abstract :
A new type of ultrafast optoelectronic device is described that shows promise for producing sub-femtosecond pulses of current. In this device a pulsed laser is focused on a nanoscale tip so that the time-dependent electric field of the radiation is superimposed on the applied static field to cause a sudden increase in the current of the emitted electrons. Simulations have been used to optimize the parameters of this, device in order to reduce the time that it takes for the current to respond to the incident radiation to less than one femtosecond
Keywords :
electron field emission; high-speed optical techniques; photoelectric devices; tungsten; W; applied static field; emitted electron current; laser-assisted field emission; pulsed laser; subfemtosecond response simulation; ultrafast optoelectronic device; Boundary conditions; Electron emission; Electron optics; Frequency; Laser theory; Optical pulses; Stimulated emission; Tunneling; Ultrafast optics; Wave functions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
Type :
conf
DOI :
10.1109/IVNC.2006.335429
Filename :
4134531
Link To Document :
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