Title :
Current transport mechanisms in n-CdO/p-InSe photosensitive heterojunctions
Author :
Kudrynskyi, Z.R.
Author_Institution :
Frantsevich Inst. for Problems of Mater. Sci., Chernivtsi, Ukraine
Abstract :
n-CdO/p-InSe photosensitive heterojunctions were fabricated by dc reactive magnetron sputtering of CdO thin film with n-type conductivity onto freshly cleaved p-InSe single-crystal substrates. Temperature dependences of the I-V characteristics of the heterojunctions are studied and current transport mechanisms through the potential barrier at forward and back biases are identified.
Keywords :
cadmium compounds; indium compounds; semiconductor heterojunctions; sputtering; CdO-InSe; DC reactive magnetron sputtering; I-V characteristics; n-type conductivity; photosensitive heterojunctions; single-crystal substrates; temperature dependences; thin film; transport mechanisms; Crystals; Heterojunctions; Lattices; Sputtering; Substrates; Temperature; Temperature measurement;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
