DocumentCode :
2042217
Title :
Comparative study of mathematically modelled High Electron Mobility Transistors and silicon nanowire transistors
Author :
Menon, Shakti N. ; Narayanankutty, K.A.
Author_Institution :
VLSI Design, Amrita Vishwa Vidyapeetham Univ., Coimbatore, India
Volume :
4
fYear :
2011
fDate :
8-10 April 2011
Firstpage :
384
Lastpage :
388
Abstract :
This work concentrates on the mathematical modeling of High Electron Mobility Transistors (HEMTs). Fermi-Dirac distribution characteristics of HEMTs and Silicon Nano-wire Transistors (SNWTs) were compared. Our mathematical modelling involves study of V-I characteristics, Electric field versus Drift velocity characteristics, ID electron density versus position characteristics, transconductance versus gate-source voltage characteristics, unity gain cut off frequency versus gate-length characteristics, mobility versus temperature characteristics and Density of states versus position characteristics. According to this model, Transferred Electron Devices (TEDs) has better drift velocity versus electric field characteristics compared to GaAs Metal Semiconductor Field Effect Transistors (MESFETs), and SNWTs have better V-I characteristics compared to HEMT. GaAs/AlGaAs HEMTs have better transconductance and unity gain cut-off frequency than GaAs HEMTs. HEMTs modelled using ballistic mobility method have better V-I characteristics compared to SNWTs. GaN HEMTs have high mobility compared to GaAs HEMTs. SNWTs have better density of states characteristics compared to GaN HEMTs.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; ballistic transport; electron density; fermion systems; gallium arsenide; high electron mobility transistors; nanowires; semiconductor device models; silicon; 1D electron density; Fermi-Dirac distribution; GaAs-AlGaAs; ballistic mobility method; density of states; drift velocity; gate-source voltage; high electron mobility transistors; metal semiconductor field effect transistors; silicon nanowire transistors; transconductance; transferred electron devices; unity gain cut off frequency; Gallium arsenide; HEMTs; Logic gates; MESFETs; MODFETs; Mathematical model; Silicon; Comparison; GaAs MESFETs; HEMTs; SNWTs; TEDs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Computer Technology (ICECT), 2011 3rd International Conference on
Conference_Location :
Kanyakumari
Print_ISBN :
978-1-4244-8678-6
Electronic_ISBN :
978-1-4244-8679-3
Type :
conf
DOI :
10.1109/ICECTECH.2011.5941926
Filename :
5941926
Link To Document :
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