Title :
Field emission from surface-reconstructed phosphorus-doped homoepitaxial diamond (111)
Author :
Yamada, T. ; Yamaguchi, H. ; Kudo, Y. ; Okano, K. ; Kato, H. ; Shikata, S. ; Nebel, C.E.
Author_Institution :
Diamond Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
Abstract :
We report for the first time about field emission from carbon-reconstructed phosphorus-doped homoepitaxial diamond surfaces. In order to achieve surface reconstruction, annealing at 950degC for 60 min in a high vacuum system has been applied. Field emission shows the lowest threshold field for the carbon reconstructed surface of 16 V/mum, while the threshold fields for oxidized and hydrogen-terminated surface are 28 V/mum and 44 V/mum, respectively. A model is introduced to discuss these results, which takes into account effective electron affinities and tunneling of electrons from the conduction band minimum and from the donor level
Keywords :
annealing; conduction bands; diamond; electron affinity; electron field emission; epitaxial layers; impurity states; phosphorus; surface reconstruction; tunnelling; 60 min; 950 degC; C:P; annealing; conduction band; donor level; electron affinities; electron tunneling; field emission; homoepitaxial diamond surfaces; surface reconstruction; threshold field; Annealing; Carbon dioxide; Cathodes; Electron emission; Image reconstruction; Low voltage; Surface morphology; Surface reconstruction; Surface treatment; Vacuum systems;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335434
