• DocumentCode
    2042271
  • Title

    Electrical properties of photosensitive heterojunctions n-TiN/p-CdTe

  • Author

    Solovan, M.N. ; Brus, V.V. ; Maryanchuk, P.D.

  • Author_Institution
    Yuriy Fedkovych Chernivtsi Nat. Univ., Chernivtsi, Ukraine
  • fYear
    2013
  • fDate
    8-14 Sept. 2013
  • Firstpage
    782
  • Lastpage
    783
  • Abstract
    Photosensitive heterojunctions n-TiN/p-CdTe were obtained for the first time. The dominating mechanism of current transport through the heterojunctions was determined under forward biases. The heterojunctions produce open circuit voltage Voc = 0,35 V, short circuit current Isc = 1,88 mA/cm2 and fill factor FF = 0,51 at illumination 80 mW/cm2.
  • Keywords
    II-VI semiconductors; cadmium compounds; photochemistry; semiconductor heterojunctions; short-circuit currents; titanium compounds; wide band gap semiconductors; PHOTOSENSITIVE HETEROJUNCTIONS ELECTRICAL PROPERTIES; TiN-CdTe; current transport; current transport mechanism; fill factor; open circuit voltage; short circuit current; Electronic mail; Heterojunctions; Lighting; Photovoltaic cells; Silicon; Solar energy; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-395-1
  • Type

    conf

  • Filename
    6653060
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2042271