DocumentCode :
2042271
Title :
Electrical properties of photosensitive heterojunctions n-TiN/p-CdTe
Author :
Solovan, M.N. ; Brus, V.V. ; Maryanchuk, P.D.
Author_Institution :
Yuriy Fedkovych Chernivtsi Nat. Univ., Chernivtsi, Ukraine
fYear :
2013
fDate :
8-14 Sept. 2013
Firstpage :
782
Lastpage :
783
Abstract :
Photosensitive heterojunctions n-TiN/p-CdTe were obtained for the first time. The dominating mechanism of current transport through the heterojunctions was determined under forward biases. The heterojunctions produce open circuit voltage Voc = 0,35 V, short circuit current Isc = 1,88 mA/cm2 and fill factor FF = 0,51 at illumination 80 mW/cm2.
Keywords :
II-VI semiconductors; cadmium compounds; photochemistry; semiconductor heterojunctions; short-circuit currents; titanium compounds; wide band gap semiconductors; PHOTOSENSITIVE HETEROJUNCTIONS ELECTRICAL PROPERTIES; TiN-CdTe; current transport; current transport mechanism; fill factor; open circuit voltage; short circuit current; Electronic mail; Heterojunctions; Lighting; Photovoltaic cells; Silicon; Solar energy; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
Type :
conf
Filename :
6653060
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2042271
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