Title :
n-TiO2/p-Si anisotype semiconductor heterojunction structure
Author :
Mostovoi, A.I. ; Brus, V.V. ; Maryanchuk, P.D.
Author_Institution :
Chernivtsi Nat. Univ. named after Yuri Fedkovych, Chernivtsi, Ukraine
Abstract :
The dominating current-transport mechanisms were established: multistep tunnel-recombination via surface states at the metallurgical interface TiO2/Si under low forward bias; the dominating mechanism of charge carriers´ transport is tunneling at forward bias V > 0.6 V. The reverse current through the heterojunctions under investigation was analyzed in the scope of the tunnel mechanism.
Keywords :
elemental semiconductors; semiconductor heterojunctions; silicon; surface states; titanium compounds; TiO2-Si; anisotype semiconductor heterojunction structure; charge carrier transport; dominating current-transport mechanisms; metallurgical interface; multistep tunnel-recombination; surface states; tunnel mechanism; Abstracts; Charge carriers; Educational institutions; Electronic mail; Heterojunctions; Silicon; Temperature dependence;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
