Optical and electrical low-frequency noise and their correlation in InGaAsP MQW lasers

Author

Simmons, John G. ; Smetona, Saulius ; Evans, John D. ; Pralgauskaite, Sandra ; Matukas, Jonas ; Palenskis, Vilius

Author_Institution

Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada

fYear

2000

fDate

2000

Firstpage

300

Lastpage

303

Abstract

The optical and electrical low-frequency noise spectra and their correlation factor of multiple quantum well strained-layer Fabry-Perot (F-P) and distributed-feedback (DFB) InGaAsP/InP laser diodes have been investigated as a function of temperature and current. Particular attention has been given to the optical and electrical fluctuations due to mode-hopping effects, which are observed in the F-P lasers at specific currents and temperatures. Both the electrical and optical noise during mode hopping have a Lorentzian type spectrum, and are very strongly correlated and very sensitive to temperature and optical feedback.

Keywords

Fabry-Perot resonators; III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser feedback; laser modes; laser noise; quantum well lasers; Fabry-Perot laser; InGaAsP; InGaAsP/InP MQW laser diode; Lorentzian spectrum; correlation factor; current dependence; distributed feedback laser; electrical fluctuations; electrical noise; low-frequency noise; mode hopping; optical feedback; optical fluctuations; optical noise; strained layer; temperature dependence; Fabry-Perot; Laser modes; Laser noise; Low-frequency noise; Optical feedback; Optical noise; Optical sensors; Quantum well devices; Quantum well lasers; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022947

Filename

1022947