• DocumentCode
    2042316
  • Title

    High-speed, low-power device trend and low-k layer delamination

  • Author

    Nakajima, Hiromasa

  • Author_Institution
    Renesas Electron. Corp., Kawasaki, Japan
  • fYear
    2012
  • fDate
    13-16 Dec. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Flipchip is one of the key technologies that offer lower parasitic impedance and better power delivery to compensate reducing margins between power and threshold voltages with. The roadmap of core voltage is shown in Fig. 1 cited from the Japan Jisso Technology Roadmap (JJTR 2011, [1]). Requirements and trends of electronic systems are surveyed every other year in Japan and broken down to the parameters by JJTR Committee of Japan Electronics and Information Technology Industries Association (JEITA). The introduction of fragile low-k layers and lead-free solder bumps with higher Young´s modulus into a die has made chip-package interaction critical. Delamination of low-k layer on a flipchip die can be seen as white spots (white bumps) in the image of scanning acoustic tomography (SAT). This paper introduces the countermeasures against white bumps during flipchip bonding and reflowing process.
  • Keywords
    Young´s modulus; acoustic tomography; delamination; flip-chip devices; low-k dielectric thin films; low-power electronics; reflow soldering; solders; JEITA; JJTR committee; Japan Electronics and Information Technology Industries Association; Japan Jisso Technology Roadmap; SAT; Young´s modulus; chip-package interaction; core voltage; electronic systems; flip chip bonding; flip chip die; fragile low-k layers; high-speed low-power device; lead-free solder bumps; low-k layer delamination; parasitic impedance; reflowing process; scanning acoustic tomography; threshold voltages; white bumps;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Materials and Packaging (EMAP), 2012 14th International Conference on
  • Conference_Location
    Lantau Island
  • Print_ISBN
    978-1-4673-4945-1
  • Electronic_ISBN
    978-1-4673-4943-7
  • Type

    conf

  • DOI
    10.1109/EMAP.2012.6507856
  • Filename
    6507856