Title :
Electrical properties of rapid thermally annealed PZT films deposited through a novel sol-gel process
Author :
Zhang, H.X. ; Han, X.Q. ; Liu, D.G. ; Kam, C.H.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
Pb(Zr0.52Ti0.48)O3 film has been deposited through a novel sol-gel process on Pt/Ti/SiO2/Si and annealed in a rapid thermal processor at 650°C. The well-crystallized film is very smooth with a roughness of ∼2.0 nm. The remnant polarization Pr (∼28.5 μC/cm2) and coercive field Ec (∼39.8 kV/cm) have been derived from the P-E hysteresis loop. The films have a dielectric constant of ∼1080 and a dielectric loss of ∼0.01 at 1 kHz. A ferroelectric polarization fatigue test of the films has shown a high fatigue resistance up to 3×1010 cycles before Pr is decreased by 50%.
Keywords :
dielectric hysteresis; dielectric polarisation; ferroelectric thin films; lead compounds; permittivity; rapid thermal annealing; sol-gel processing; surface topography; 1 kHz; 650 degC; PZT-Pt-Ti-SiO2-Si; PbZrO3TiO3-Pt-Ti-SiO2-Si; coercive field; dielectric constant; dielectric loss; fatigue resistance; ferroelectric polarization fatigue test; hysteresis loop; rapid thermal annealing; remnant polarization; sol-gel process; surface roughness; Dielectric constant; Dielectric losses; Fatigue; Ferroelectric films; Ferroelectric materials; Hysteresis; Polarization; Rapid thermal annealing; Rapid thermal processing; Semiconductor films;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022951
