Research of mechanisms of dispersion in heterostructures with plasma waves at low temperatures

On the basis of a method of statistical modelling the research of the basic mechanisms of dispersion in semi-conductor heterostructures at low temperatures, and the basic physical process characteristics of charge carriers carrying over in a mode with the plasma waves advent is carried out. Novelty consists in statistical modelling and the self-coordinated decision of Schrödinger equations that allow revealing the basic physical mechanisms defining increase of speed of plasma distribution waves and requirements to a choice of heterostructure electrophysical parameters to increase the sensitivity of semiconductor devices based on them in the terahertz at low temperatures.