Title :
Schottky behaviour of Pd/β-SiC junctions
Author :
Basu, S. ; Roy, S. ; Laha, R. ; Jacob, C. ; Nishino, S.
Author_Institution :
Mater. Sci. Centre, Indian Inst. of Technol., Kharagpur, India
Abstract :
Pd/β-SiC Schottky junctions using both epilayer and bulk SiC were fabricated and characterised by current-voltage (I-V) measurements. The effect of operating temperature on IN characteristics was studied. The ideality factor improved considerably at higher temperature. Annealing of Pd/β-SiC Schottky junctions at 400°C improved the junction characteristics, which deteriorated at 800°C due to degradation of Al/SiC ohmic contacts. These junctions are suitable for gas sensor applications at elevated temperatures.
Keywords :
Schottky barriers; annealing; palladium; semiconductor-metal boundaries; silicon compounds; wide band gap semiconductors; 400 C; 800 C; Pd-SiC; Pd/β-SiC junctions; Schottky behaviour; annealing; current-voltage measurements; gas sensor applications; ideality factor; ohmic contacts; operating temperature; Annealing; Gas detectors; Materials science and technology; Ohmic contacts; Schottky barriers; Semiconductor films; Semiconductor materials; Silicon carbide; Substrates; Temperature sensors;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022955
