Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection

Electroplated copper thin films have become indispensable for the interconnections in next-generation semiconductor devices because of its low electric resistivity and high thermal conductivity. Since the electrical properties of the electroplated copper thin films vary drastically depending on their micro texture, the effect of the base layer material (a copper diffusion preventing layer and an electroplating seed layer) on the crystallinity of the electroplated copper thin films was investigated quantitatively in order to assure and improve the performance and reliability of electroplated copper thin-film interconnections.