Title :
Measurement of optical absorption in semiconductor layer structures
Author :
Dao, L.V. ; Gal, M. ; Koo, B.H. ; Makino, H. ; Yao, Tingfeng
Author_Institution :
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
Abstract :
We describe a simple method based on photoluminescence, which allowed us to determine the absorption spectra of InAs/InAlAs quantum dots at low temperatures. The method is convenient when other, more conventional absorption measurements are not feasible, and the sample emits luminescence.
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; photoluminescence; semiconductor quantum dots; visible spectra; 10 K; InAs-InAlAs; optical absorption; photoluminescence; quantum dots; semiconductor layer structures; Absorption; Luminescence; Optical scattering; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022961
