DocumentCode
2042636
Title
Measurement of optical absorption in semiconductor layer structures
Author
Dao, L.V. ; Gal, M. ; Koo, B.H. ; Makino, H. ; Yao, Tingfeng
Author_Institution
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
fYear
2000
fDate
2000
Firstpage
348
Lastpage
350
Abstract
We describe a simple method based on photoluminescence, which allowed us to determine the absorption spectra of InAs/InAlAs quantum dots at low temperatures. The method is convenient when other, more conventional absorption measurements are not feasible, and the sample emits luminescence.
Keywords
III-V semiconductors; aluminium compounds; indium compounds; photoluminescence; semiconductor quantum dots; visible spectra; 10 K; InAs-InAlAs; optical absorption; photoluminescence; quantum dots; semiconductor layer structures; Absorption; Luminescence; Optical scattering; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN
0-7803-6698-0
Type
conf
DOI
10.1109/COMMAD.2000.1022961
Filename
1022961
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