DocumentCode
2042667
Title
Micromagnetic modeling of pseudo spin valve elements
Author
Xiaozhu Shu
Author_Institution
Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., China
fYear
2003
fDate
March 30 2003-April 3 2003
Lastpage
11
Abstract
In this paper, we discuss a magnetoresistance random access memory (MRAM) made of pseudo spin valve (PSV) devices. The dependence of these fields on the shape of PSV and the residual domain are studied. Micromagnetic modelling is used to investigate the effect of magnetostatic coupling and its properties are analyzed.
Keywords
Permalloy; ferromagnetic materials; finite difference methods; magnetic domains; magnetic hysteresis; magnetic thin film devices; magnetic thin films; micromagnetics; spin valves; FeNi; magnetoresistance random access memory; magnetostatic coupling; micromagnetic modeling; pseudo spin valve devices; residual domain; Couplings; Magnetic analysis; Magnetic domains; Magnetic properties; Magnetoresistance; Magnetostatics; Micromagnetics; Random access memory; Shape; Spin valves;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230312
Filename
1230312
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