DocumentCode :
2042679
Title :
Simulation Study of Screen Effects on Field Emission from Multiple One-dimensional Nanostructures Grown on Silicon Substrates
Author :
Lan, Yung-Chiang ; Yan, MingXun
Author_Institution :
Inst. of Electro-Opt. Sci. & Eng., Nat. Cheng Kung Univ., Tainan
fYear :
2006
fDate :
38899
Firstpage :
239
Lastpage :
240
Abstract :
Summary form only given. In our previous work, a classical carrier transport model is established to study the junction effects on the field emission currents of the narrow- and wide-band-gap single one-dimensional nanostructure grown on n-type and p-type doped silicon substrates. Our simulation results agree with the experiments qualitatively and provide a perspicuous explanation for the junction effects by using the band structure theory. But the screen effects of the multiple nanostructures on the band structures around the nanostructure-substrate interface and on the field emission currents are not clear yet. In this study, the carrier transport model mentioned above is applied to investigate the screen effects of the multiple one-dimensional nanostructures. The classical transport equation is used to describe the carrier transport in the material and solved together with the Poisson´s equation. The field emission at the emitter-vacuum interface is modeled by the Fowler-Nordheim equation. For studying the interaction between the multiple nanostructures, two nanorods with different heights and distances in the simulation domain are modeled and accompanied with a pair of periodic boundary conditions. Figure 1 presents the geometry model in this research. The CNT and SiCN 1-D nanorods are grown on n/p-type Si substrate with the doping concentration of 1015 I/cm3. Figure 2 and 3 present the electrostatic contours, the band diagrams for the side nanorods and the F-N plots for the SiCN nanorods with n-type substrate and inter-rod distances of 0.1 mum and 0.3 mum, respectively. Our simulation results exhibit that when two nanorodes are close, the screen effects will distort the electric potential distribution around the nanorods and change the band structure at the nanostructure-substrate interface. Therefore, the field emission characteristics are very different for each nanorod in the closely-aligned nanostructure arrays
Keywords :
Poisson equation; band structure; carbon nanotubes; doping profiles; electron field emission; silicon compounds; C; C-Si; Poisson´s equation; Si; SiCN; SiCN-Si; band diagrams; band structure theory; carrier transport; classical carrier transport model; closely-aligned nanostructure arrays; doping concentration; electric potential distribution; electrostatic contours; emitter-vacuum interface; field emission; field emission characteristics; field emission currents; interrod distances; junction effects; multiple one-dimensional nanostructures; n-type doped silicon substrates; nanorods; nanostructure-substrate interface; narrow-band-gap single one-dimensional nanostructure; p-type doped silicon substrates; periodic boundary conditions; screen effects; wide-band-gap single one-dimensional nanostructure; Boundary conditions; Doping; Electrostatics; Geometry; Nanostructured materials; Nanostructures; Poisson equations; Semiconductor process modeling; Silicon; Solid modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
Type :
conf
DOI :
10.1109/IVNC.2006.335447
Filename :
4134549
Link To Document :
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