Title :
Selective NO2 gas sensing characteristics of sol-gel prepared MoO3-WO3 thin films
Author :
Galatsis, K. ; Li, Y.X. ; Wlodarski, W. ; Kalantar-zadeh, K. ; Comini, E. ; Sberveglieri, G. ; Cantalini, C.
Author_Institution :
Sensor Technol. Lab., R. Melbourne Inst. of Technol., Vic., Australia
Abstract :
Molybdenum trioxide - tungsten trioxide (MoO3-WO3) binary metal oxide thin films have been prepared by the sol-gel process. The films were deposited using the spin coating technique onto alumina substrates with interdigital electrodes and single crystal silicon substrates for electrical and micro characterization. Scanning Electron Microscopy (SEM) showed MoO3-WO3 film morphology composed of MoO3 needle like grains and WO3 spherical grains when annealed at 450°C. The films exhibited selective gas sensing characteristics at an operating temperature of 300°C towards nitrogen dioxide (NO2).
Keywords :
annealing; crystal morphology; gas sensors; grain size; molybdenum compounds; nitrogen compounds; scanning electron microscopy; semiconductor thin films; sol-gel processing; spin coating; surface morphology; tungsten compounds; 300 C; 450 C; MoO3-WO3; NO2; SEM; alumina substrates; annealed; interdigital electrodes; selective NO2 gas sensing characteristics; sol-gel prepared MoO3-WO3 thin films; spin coating technique; Coatings; Electrodes; Morphology; Needles; Scanning electron microscopy; Semiconductor films; Silicon; Substrates; Transistors; Tungsten;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022964
