DocumentCode
2042725
Title
Single Silicon Field Emitter with High Aspect Ratio
Author
Gudkova, S.A. ; Makhiboroda, M.A. ; Fedirko, V.A. ; Djuzhev, N.A.
Author_Institution
F.V. Lukin State Res. Inst. of Phys. Problems, Moscow
fYear
2006
fDate
38899
Firstpage
243
Lastpage
244
Abstract
Single silicon field emitter with high aspect ratio is fabricated using deep wet anisotropic etching and step-by-step oxidation. The emission performance of the field emitter is characterised. The C-V characteristic of the emitter together with the Fauler-Nordheim plot are presented
Keywords
capacitance; elemental semiconductors; etching; field emission; oxidation; silicon; C-V characteristic; Fauler-Nordheim plot; Si; aspect ratio; deep wet anisotropic etching; single silicon field emitter; step-by-step oxidation; Anodes; Capacitance-voltage characteristics; Cathodes; Current measurement; Diodes; Fabrication; Geometry; Scanning electron microscopy; Silicon; Slabs;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location
Guilin
Print_ISBN
1-4244-0401-0
Type
conf
DOI
10.1109/IVNC.2006.335449
Filename
4134551
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