Title :
Numerical analysis of void-induced thermal effects on GaAs/AlGaAs high power quantum well laser diodes
Author :
Gity, F. ; Ahmadi, V. ; Noshiravani, M. ; Abedi, K.
Author_Institution :
Dept. of Electr. Eng., Tarbiat Modares Univ., Tehran, Iran
Abstract :
Microscopic voids in the die attachment solder layers of high power laser diodes (HPLDs) cause to degrade their overall thermal transfer performance. This paper presents the effects of voids on the thermal conductivity, leakage and threshold currents, characteristic temperature (T0) and output power of a single quantum well (SQW) HPLD. These effects are modeled by means of finite difference method (FDM). This numerical model calculates the time-dependent axial variations of photon density, carrier density and temperature in semiconductor laser self-consistently. The temperature dependence of the wavelength shift and the thermal mode hopping concept is also demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; finite difference methods; gallium arsenide; leakage currents; microassembling; quantum well lasers; thermal conductivity; thermo-optical effects; voids (solid); GaAs-AlGaAs; carrier density; die attachment solder layers; finite difference method; high power quantum well laser diodes; leakage currents; microscopic voids; photon density; thermal conductivity; thermal mode hopping; threshold currents; time-dependent axial variations; void-induced thermal effects; Cavity resonators; Charge carrier density; Mathematical model; Radiative recombination; Temperature; Temperature dependence; finite difference method; high power laser diode; hot spot; mode hopping; thermal behavior; thermal rollover; void; wavelength shift;
Conference_Titel :
GCC Conference (GCC), 2006 IEEE
Conference_Location :
Manama
Print_ISBN :
978-0-7803-9590-9
Electronic_ISBN :
978-0-7803-9591-6
DOI :
10.1109/IEEEGCC.2006.5686220
