Template method of forming InSb large aspect ratio quantum nanowires

Author

Gorokh, G.G. ; Obukhov, I.A. ; Lozovenko, A.A. ; Zakhlebaeva, A.I. ; Sochneva, E.A.

Author_Institution

Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus

fYear

2013

fDate

8-14 Sept. 2013

Firstpage

820

Lastpage

821

Abstract

Method of nanoporous templates creating based on the anodic alumina (AA) for forming of quantum nanowires with a high aspect ratio is developed. The processes of InSb electrochemical deposition in the pores of templates are studied. The results of electron microscopic study of these nanostructures and electron probe electron probe X-ray spectrum microanalysis are shown. Percentage ratio of indium and antimony in formed nanowires is determined.

Keywords

III-V semiconductors; X-ray spectra; electron microscopy; electron probe analysis; indium compounds; nanoporous materials; nanowires; narrow band gap semiconductors; semiconductor quantum wires; InSb; anodic alumina; electrochemical deposition; electron microscopic study; electron probe electron probe X-ray spectrum microanalysis; indium-antimony percentage ratio; large-aspect ratio quantum nanowires; nanoporous templates; nanostructures; template method; template pores; Copper; Educational institutions; Electronic mail; Indium; Informatics; Nanowires; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-966-335-395-1

Type

conf

Filename

6653079