Study of nanoscale films TI-O-N BY nuclear-physical methods of analysis before and after thermal annealing

Author

Demianenko, A.A.

Author_Institution

Sumy State Univ., Sumy, Ukraine

fYear

2013

fDate

8-14 Sept. 2013

Firstpage

826

Lastpage

827

Abstract

Using a variety of complementary methods of element structural analysis, such as a slow positron bunch (SPB), Rutherford backscattering spectrometry (RBS) and x-ray photoelectron spectroscopy (XPS), ~5-nm nanoscale Ti-O-N film), obtained by Cathodic-Arc-Vapor-Deposition method at the synthesis temperature (250...300)°C, were studied. This article concerns elemental composition profiles of the defect and the depth of the atoms on the surface of the coating in a 3D view and survey, obtained by comparing the X-ray photoelectron spectroscopy (XPS).

Keywords

Rutherford backscattering; X-ray photoelectron spectra; annealing; nanostructured materials; plasma CVD; titanium compounds; Cathodic Arc Vapor Deposition; Rutherford backscattering spectrometry; TiON; X-ray photoelectron spectroscopy; element structural analysis; nanoscale films; nuclear physical analysis; slow positron bunch; synthesis temperature; temperature 250 degC to 300 degC; thermal annealing; Annealing; Backscatter; Coatings; Films; Nanoscale devices; Spectroscopy; Three-dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-966-335-395-1

Type

conf

Filename

6653081