Electrical properties of PET films with semiconducting/interface layer

Author

Park, Dae-H ; Kim, Dong-S

Author_Institution

Sch. of Electr. & Electron. Eng., Wonkwang Univ., Iksan, South Korea

fYear

2000

fDate

2000

Firstpage

44

Lastpage

47

Abstract

In this paper, PET (polyethylene terephthalate) films with semiconducting and interface layers were investigated. The electrical properties, such as volume resistivity, tanδ (dissipation factor), and breakdown strength at various temperatures were measured. It is found that the volume resistivity of him (dependence on semiconducting/interface layers) and electrical properties of PET films are changed. Breakdown strength and dissipation factor of PET films with a semiconducting layer (PET/S/PET) are much lower than PET and PET/PET films, due to the increase of charge density or charges between two contacted surfaces in interface/semiconducting layers. It has also been found that the dissipation factor of each film is increased with temperature. For PET/S/PET film, this is dependent on temperature more than PET or PET/PET. However, the breakdown strength is increased up to 85°C and then decreased over 100°C. The electrical properties of PET films with semiconducting/interface layer decrease more than without the layer. This Is a result of temperature dependency, which affects the thermal resistance properties of the PET film much more than the semiconducting/interface layers

Keywords

dielectric losses; electric breakdown; electrical resistivity; organic semiconductors; polyethylene insulation; polymer films; breakdown strength; charge density; dissipation factor; interface layers; polyethylene terephthalate; polymer films; resistivity; semiconducting layers; temperature dependence; Conductivity; Electric breakdown; Plastic films; Polyethylene; Positron emission tomography; Semiconductivity; Semiconductor films; Temperature dependence; Temperature measurement; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulation, 2000. Conference Record of the 2000 IEEE International Symposium on

Conference_Location

Anaheim, CA

ISSN

1089-084X

Print_ISBN

0-7803-5931-3

Type

conf

DOI

10.1109/ELINSL.2000.845417

Filename

845417