DocumentCode
2042983
Title
Formation of low-temperature oxide inside of straight-through pores in silicon substrates for 3-D metal interconnections
Author
Lazarouk, S.K. ; Dolbik, A.V. ; Turtsevich, A.S. ; Shvedau, S.V. ; Labunov, V.A.
Author_Institution
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear
2013
fDate
8-14 Sept. 2013
Firstpage
838
Lastpage
839
Abstract
Silicon substrates with ordered pores, which pass through the whole sample, have been fabricated for 3-D metal interconnections. The inter-pore distance can be ranged from 4 to 10 μm. The thickness of silicon substrate can reach up to 200-300 μm. The ordered porous structures are obtained by means of photolithographic process. Electrochemical anodization has been used for oxide formation inside of straight-through pores in silicon substrates. The oxide thickness can reach 120 nm.
Keywords
elemental semiconductors; interconnections; photolithography; porous semiconductors; silicon; 3D metal interconnections; Si; electrochemical anodization; low-temperature oxide formation; ordered porous structures; photolithographic process; size 4 mum to 10 mum; straight-through pores; Educational institutions; Electronic mail; Informatics; Metals; Silicon; Substrates; System-on-chip;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-395-1
Type
conf
Filename
6653087
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