DocumentCode :
2042989
Title :
Defects density distribution of AIN films produced by RF sputtering in argon-nitrogen-hydrogen mixture
Author :
Ligatchev, V. ; Yoon, S.F. ; Ahn, J. ; Zhang, Q. ; Rusli
Author_Institution :
Nanyang Technological University
fYear :
2000
fDate :
6-8 Dec. 2000
Firstpage :
387
Lastpage :
390
Keywords :
Conductivity; Deconvolution; Molecular beam epitaxial growth; Optical films; Radio frequency; Silicon; Sputtering; Substrates; Temperature; US Department of Defense;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Conference_Location :
Bundoora, Victoria, Australia
Print_ISBN :
0-7803-6698-0
Type :
conf
DOI :
10.1109/COMMAD.2000.1022971
Filename :
1022971
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2042989
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