Title :
Preparation of Pb(Zr,Ti)O3 ferroelectric thin films by a pulsed laser ablation technique
Author :
Jingping, Xu ; Tiecheng, Bai ; Chengwu, An ; Li Xing Jiao
Author_Institution :
Dept. of Solid State Electron., Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
Ferroelectric thin films of Pb(Zr,Ti)O3 have been fabricated on polished silicon wafers by a pulsed laser ablation technique at substrate temperature of 100-200°C. The ferroelectric properties of the thin films can be greatly improved by a post-deposition laser annealing. Some factors which affect the quality of thin films were investigated. The structures of thin films were analyzed by X-ray diffraction. The Curie temperature and hysteresis loops of PZT ferroelectric thin films were measured
Keywords :
X-ray diffraction examination of materials; dielectric hysteresis; ferroelectric Curie temperature; ferroelectric thin films; laser beam annealing; lead compounds; 100 to 200 C; Curie temperature; PZT; PbZrO3TiO3; X-ray diffraction; ferroelectric properties; ferroelectric thin films; hysteresis loops; laser annealing; polished Si wafers; preparation; pulsed laser ablation technique; structures; substrate temperature; Annealing; Ferroelectric materials; Laser ablation; Optical pulses; Semiconductor thin films; Silicon; Temperature; Transistors; X-ray diffraction; X-ray lasers;
Conference_Titel :
Electronic Components and Technology Conference, 1991. Proceedings., 41st
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-0012-2
DOI :
10.1109/ECTC.1991.163933
