Title :
Surface Localized State Enhanced Field Electron Emission
Author :
Ping, Jinglei ; Li, Zhibing ; Xu, Ningsheng
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-Sen Univ., Guangzhou
Abstract :
The field electron emission from extending states through a localized energy level in a phenomenological way has been discussed. The method of non-equilibrium Green function is adopted. The physical origin of the enhancement of field-emission can be understood from the potential-energy diagram. For the higher temperature, the localized level can be occupied in weaker field. Correspondingly, the transition field of temperature 400 K is weaker than that of T=300 K. The current predicted by conventional F-N theory is weaker than the current of the present calculation that includes the localized level effect
Keywords :
Green´s function methods; electron field emission; weak localisation; F-N theory; field electron emission; localized energy level; localized level effect; nonequilibrium Green function; potential-energy diagram; surface localized state; transition field; Electron emission; Electron sources; Energy states; Labeling; Laboratories; Power engineering and energy; Solids; Stationary state; Sun; Temperature;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335461
