DocumentCode :
2043068
Title :
Modelling of device structure effects in backside illuminated CMOS compatible photodiodes
Author :
Hinckley, Steven ; Gluszak, Edward A. ; Eshraghian, Kamran
Author_Institution :
Centre for Very High Speed Microelectron. Syst., Edith Cowan Univ., Joondalup, WA, Australia
fYear :
2000
fDate :
2000
Firstpage :
399
Lastpage :
402
Abstract :
A backside illuminated CMOS photodiode consisting of an n+ (source implant) emitter and P-substrate base has been numerically simulated in a 1D approximation. The effects of device dimensions (junction depth and photodiode thickness), emitter and base dopant concentrations have been examined in relation to the spectral dependence of the quantum efficiency. The calculations indicate that greater control over the spectral response of the photodiode can be realised for a backside-illuminated photodiode, compared to the normal frontside illuminated structure of current Camera on a CMOS chip technology.
Keywords :
CMOS integrated circuits; integrated circuit modelling; photodiodes; 1D model; CMOS photodiode; Camera-on-a-CMOS chip technology; backside illumination; numerical simulation; quantum efficiency; spectral response; CMOS image sensors; CMOS process; CMOS technology; Cameras; Fabrication; Military standards; Numerical simulation; Photodetectors; Photodiodes; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
Type :
conf
DOI :
10.1109/COMMAD.2000.1022974
Filename :
1022974
Link To Document :
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