Techniques for micromachining multilayered structures in silicon

Author

Powell, Oliver ; Sweatman, Dennis ; Harrison, Barry

Author_Institution

Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia

fYear

2000

fDate

2000

Firstpage

407

Lastpage

410

Abstract

The effects of wet anisotropic etching of [100] silicon were studied with mask edges aligned at 45° to the primary wafer. Samples were etched in aqueous KOH solution with the addition of isopropyl alcohol (IPA). The addition of IPA caused a change from the formation of vertical {100} walls to sloping {110} walls only for solutions below a critical concentration and temperature. The dependence on concentration was then applied to produce a new multilayer structure with {110} walls fabricated on top of {100} walls.

Keywords

elemental semiconductors; etching; micromachining; silicon; IPA addition effects; Si; Si[100]; aqueous KOH solution; concentration dependence; isopropyl alcohol; mask edge alignment; micromachining; multilayered structures; sloping {110} walls; temperature dependence; vertical {100} walls; wet anisotropic etching; Anisotropic magnetoresistance; Etching; Microelectronics; Micromachining; Nonhomogeneous media; Optical resonators; Optical surface waves; Optical waveguides; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022976

Filename

1022976