Title :
Optimizing features of photorefractive devices by tailoring native defects incorporated in the GaAs/AlGaAs multiple quantum wells
Author :
Han, Y.J. ; Guo, W. ; Bao, C.L. ; Huang, Q. ; Zhou, J.M.
Author_Institution :
Inst. of Phys., Acad. Sinica, Beijing, China
Abstract :
To study the influence of defects on device effect, low temperature (LT) grown GaAs/AlGaAs multiple-quantum-wells (MQWs) were grown under different As pressure for the use in a Stark geometry device. The differences in the samples are their defect density in the MQW region. By comparing optical properties, it was found that the optimum device effect coming from high optical quality obtained from samples grown at a critical condition. The detailed defect characteristics and optical properties of the samples with different excess As have been discussed.
Keywords :
III-V semiconductors; aluminium compounds; crystal defects; electro-optical devices; electroabsorption; gallium arsenide; photoluminescence; photorefractive effect; quantum well devices; semiconductor epitaxial layers; GaAs-AlGaAs; Stark-geometry; defect density; electroabsorption; excess As; multiple quantum wells; native defects; optical quality; photoluminescence; photorefractive devices; Absorption; Annealing; Gallium arsenide; Optical devices; Optical materials; Photorefractive effect; Photorefractive materials; Physics; Quantum well devices; Temperature;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022982
