Title :
A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor
Author :
Hanbicki, A.T. ; Stroud, R.M. ; Magno, R. ; Kioseoglou, G. ; Li, C.H. ; Jonker, B.T. ; Itskos, G. ; Mallory, R. ; Yasar, M. ; Petrou, A.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, we report here that spin injection from an Fe Schottky contact produces a spin polarization of 32% in an AlGaAs/GaAs quantum well, demonstrate via the Rowell criteria that tunneling is the dominate transport process, and examine the atomic structure of the spin injecting interface with TEM.
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; ferromagnetic materials; gallium arsenide; iron; magnetic tunnelling; semiconductor quantum wells; spin polarised transport; transmission electron microscopy; AlGaAs/GaAs quantum well; Fe Schottky tunnel barrier contact; Fe-AlGaAs-GaAs; Rowell criteria; TEM; atomic structure; electrical spin injection; magnetic metal; spin injecting interface; spin polarization; tunneling transport process; Contacts; Iron; Light emitting diodes; Magnetic semiconductors; Magnetoelectronics; Optical polarization; Schottky barriers; Spin polarized transport; Temperature; Tunneling;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230334
