Title :
A novel high gain silicon based spin transistor
Author :
Dennis, C.L. ; Sirisathitkul, C. ; Ensell, G.J. ; Gregg, J.F. ; Thompson, S.M.
Author_Institution :
Clarendon Lab., Oxford Univ., UK
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, we fabricate a novel high gain silicon based spin transistor and measured the minority carrier transport in the silicon. When measured with a magnetic field applied in the plane of the transistor and perpendicular to the direction of the current flow, the I-V characteristics show a variation in the collector current causing the transistor to behave as a magnetically tunable device with a field dependent gain.
Keywords :
field effect transistors; photolithography; silicon; I-V characteristics; Si; collector current; field dependent gain; high gain silicon based spin transistor; magnetically tunable device; minority carrier transport; transistor fabrication; Computer science; Electron emission; Land mobile radio; Large Hadron Collider; Polarization; Shape; Silicon; Temperature; Tunneling magnetoresistance; Voltage;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230337
