Ultrafast time-resolved photoluminescence measurements on InGaAs/GaAs quantum dots

Author

Dao, L.V. ; Gal, M. ; Babinski, A. ; Jagadish, C.

Author_Institution

Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia

fYear

2000

fDate

2000

Firstpage

443

Lastpage

446

Abstract

Time resolved photoluminescence (PL) on InGaAs/GaAs showed that the carrier dynamics is affected by two distinct factors: the capture of the photo-excited carriers into the quantum dot (QD) states and the carrier relaxation inside the dots. The ratio of these two components is a function of the excitation intensity. We also demonstrate the influence of the Auger-like scattering in the carrier relaxation process in InGaAs/GaAs quantum dots by analysing the intensity dependence of time resolved spectra.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; time resolved spectra; Auger-like scattering; InGaAs-GaAs; carrier dynamics; carrier relaxation; excitation intensity; photo-excited carriers; quantum dots; ultrafast time-resolved photoluminescence; Gallium arsenide; Indium gallium arsenide; Optical scattering; Photoluminescence; Physics; Quantum dots; Temperature distribution; Time measurement; US Department of Transportation; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022985

Filename

1022985