DocumentCode
2043432
Title
Spin injection in an FeCo/Si/FeCo structure: a spin transistor
Author
Lee, H.J. ; Hwang, U.J. ; Cho, S.J. ; Kim, Y.M. ; Chang, J.Y. ; Park, Y.J. ; Han, S.H. ; Kim, Y.K. ; Shin, M.W. ; Lee, W.Y.
Author_Institution
Korea Inst. of Sci. & Technol., Seoul, South Korea
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this article, we report the spin-valve effect in a lateral spin-injection device with an FM/Si/FM structure.
Keywords
cobalt alloys; elemental semiconductors; ferromagnetic materials; iron alloys; metal-semiconductor-metal structures; silicon; spin polarised transport; spin valves; transistors; FM-Si-FM structure; FeCo-Si-FeCo; FeCo-Si-FeCo structure; spin injection; spin transistor; spin valve effect; Electron beams; Electron optics; Intelligent networks; Lithography; Magnetic fields; Magnetic switching; Spin polarized transport; Sputter etching; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230338
Filename
1230338
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