Low-k dielectrics for ULSI multilevel interconnections: thickness-dependent electrical and dielectric properties

Author

Kim, H.K. ; Shi, F.G. ; Zhao, B. ; Brongo, M.

Author_Institution

Dept. of Chem. & Biochem. Eng. & Mater. Sci., California Univ., Irvine, CA, USA

fYear

2000

fDate

2000

Firstpage

62

Lastpage

65

Abstract

Electrical and dielectric properties of a promising low-dielectric constant (low-k) crystalline polymer thin film are investigated for deep-submicron multilevel interconnection applications. Filmetrics F20, I-V characteristic measurement, fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) are used to characterize the low-k film. The dc dielectric breakdown strength and the dielectric constant are obtained as a function of film thickness, and a model for the film thickness dependent breakdown strength is also discussed

Keywords

Fourier transform spectra; ULSI; X-ray diffraction; electric breakdown; infrared spectra; integrated circuit interconnections; organic insulating materials; permittivity; polymer films; FTIR spectra; I-V characteristics; ULSI multilevel interconnections; X-ray diffraction; crystalline polymer thin film; dielectric breakdown strength; dielectric constant; film thickness; low-k dielectrics; Crystallization; Dielectric breakdown; Dielectric measurements; Dielectric thin films; Fourier transforms; Infrared spectra; Polymer films; Ultra large scale integration; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulation, 2000. Conference Record of the 2000 IEEE International Symposium on

Conference_Location

Anaheim, CA

ISSN

1089-084X

Print_ISBN

0-7803-5931-3

Type

conf

DOI

10.1109/ELINSL.2000.845437

Filename

845437