Title :
Electron drift velocity modulation in mis transistor structure with one-dimensional electron gas
Author :
Borzdov, A.V. ; Pozdnyakov, D.V. ; Borzdov, V.M.
Author_Institution :
Belarusian State Univ., Minsk, Belarus
Abstract :
The effect of the gate voltage on the electron drift velocity in GaAs quantum nanowire transistor structure is studied. Electron transport is simulated by the Monte Carlo method in the electric quantum limit. The possibility of effective drift velocity modulation in the structure by the applied gate bias is shown.
Keywords :
III-V semiconductors; MIS devices; Monte Carlo methods; electron gas; gallium arsenide; nanowires; semiconductor quantum wires; GaAs; GaAs quantum nanowire transistor; MIS transistor structure; Monte Carlo method; electric quantum limit; electron drift velocity modulation; electron transport; gate voltage effect; one-dimensional electron gas; Aluminum oxide; Electron mobility; Gallium arsenide; Scattering; Transistors; Wires;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
