Effects of polarisation on solar-blind AlGaN UV photodiodes

Author

Kuek, J.J. ; Pulfrey, D.L. ; Nener, B.D. ; Dell, J.M. ; Parish, G. ; Mishra, U.K.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Western Australia, Crawley, WA, Australia

fYear

2000

fDate

2000

Firstpage

459

Lastpage

462

Abstract

The effects of spontaneous and strain induced polarisation, and incomplete dopant ionisation on the spectral responsivity of a Ga-faced p-GaN/i-Al_0.33Ga_0.67N/n-GaN photodiode structure are determined using a commercial finite element modelling package. It is shown that polarisation induced interface charges increase the barrier to carriers generated in the GaN regions of the diode, improving the solar-blindness of the diode by more than three orders of magnitude. In contrast, incomplete dopant ionisation has only a minor effect.

Keywords

III-V semiconductors; aluminium compounds; finite element analysis; gallium compounds; p-i-n photodiodes; semiconductor device models; ultraviolet detectors; wide band gap semiconductors; GaN-Al_0.33Ga_0.67N-GaN; UV photodetector; finite element model; incomplete dopant ionisation; interface charge; p-GaN/i-Al_0.33Ga_0.67N/n-GaN photodiode; solar blindness; spectral responsivity; spontaneous polarisation; strain induced polarisation; Aluminum gallium nitride; Capacitive sensors; Diodes; Finite element methods; Ionization; Packaging; Photodiodes; Polarization; Semiconductor process modeling; Solar power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022989

Filename

1022989