Title :
Diodes on gallium arsenide nanostructure
Author :
Goncharuk, N.M. ; Karushkin, N.F. ; Orehovskiy, V.A. ; Malyshko, V.V.
Author_Institution :
State Enterprise Res. Inst. “Orion”, Kiev, Ukraine
Abstract :
The dependence of impedance of a diode on AlGaAs/GaAs nanostructure with tunnel injection of electrons through AlGaAs single potential barrier and their transit in GaAs drift layer vs. parameters of transit and barrier layers is investigated in a framework of small-signal theory. It has been shown that a negative conductance band of the diodes with injection delay time from three to nine tenth of a picosecond is in a submillimeter range. The dependence of a value and frequency of negative conductance maximum vs. diode parameters has been found.
Keywords :
diodes; gallium arsenide; nanostructured materials; diode parameters; electrons; gallium arsenide nanostructure; injection delay time; negative conductance band; negative conductance maximum; single potential barrier; small signal theory; tunnel injection; Electronic mail; Gallium arsenide; Optimized production technology; Radio frequency; Semiconductor diodes; Tunneling;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
