DocumentCode
2043540
Title
Fabrication and Characteristics of GaAs Field Emitters
Author
Takigawa, Yoshihito ; Neo, Yoichiro ; Mimura, Hidenori
Author_Institution
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu
fYear
2006
fDate
38899
Firstpage
307
Lastpage
308
Abstract
In this paper, fabrication and characteristics of GaAs field emitters were studied. The front and back sides of the GaAs field emitter were characterized using scanning electron microscopy (SEM). The emission current characteristics of the emitter was measured using a diode configuration in a vacuum of 4 times 10-6 Pa. The apparatus for measuring photo-response experiments was also presented
Keywords
III-V semiconductors; field emitter arrays; gallium arsenide; scanning electron microscopy; GaAs; GaAs field emitters; SEM; apparatus; emission current characteristics; photoresponse experiments; scanning electron microscopy; Biomembranes; Cathodes; Electron beams; Electron emission; Etching; Fabrication; Gallium arsenide; Optical modulation; Photonic band gap; Pulse modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location
Guilin
Print_ISBN
1-4244-0401-0
Type
conf
DOI
10.1109/IVNC.2006.335481
Filename
4134583
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