DocumentCode
2043666
Title
Comparison studies on growth modes of MBE grown ZnSe on GaAs [111] A and GaAs [111] B, using RHEED
Author
Gard, F.S. ; Riley, J.D. ; Leckey, R. ; Usher, B.F.
Author_Institution
Dept. of Phys., La Trobe Univ., Bundoora, Vic., Australia
fYear
2000
fDate
2000
Firstpage
475
Lastpage
478
Abstract
In the last three decades, research into wide bandgap II-VI semiconductors was mainly concentrated on the growth and characterisation of ZnSe based structures on GaAs [001] substrates. Therefore, very little is known about the growth processes on {111} GaAs surfaces. This paper presents the comparison of surface processes during MBE hetero-epitaxial growth of ZnSe epilayers on GaAs [111] A, and GaAs [111] B substrates using reflection high-energy diffraction (RHEED).
Keywords
II-VI semiconductors; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; zinc compounds; GaAs; GaAs[111]A surface; GaAs[111]B surface; MBE; RHEED; ZnSe; growth modes; heteroepitaxial growth; wide bandgap semiconductors; Atomic layer deposition; Chemicals; Diffraction; Etching; Gallium arsenide; MONOS devices; Substrates; Surface reconstruction; Temperature; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN
0-7803-6698-0
Type
conf
DOI
10.1109/COMMAD.2000.1022993
Filename
1022993
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